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QS6M3
Transistors
2.5V Drive Nch+Pch MOSFET
QS6M3
Structure
Silicon N-channel / P-channel MOSFET
Dimensions (Unit : mm)
TSMT6
2.9
1.0MAX
Features
1.9
0.95 0.95
0.85
0.7
1) Low on-resistance.
2) Built-in G-S Protection Diode.
(6)
(5)
(4)
0~0.1
3) Small Surface Mount Package (TSMT6).
(1)
(2)
(3)
1pin mark
0.4
0.16
Each lead has same dimensions
Application
Power switching, DC / DC converter.
Packaging specifications
Abbreviated symbol : M03
Equivalent circuit
Type
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
(6)
? 2
(5)
? 2
(4)
QS6M3
Absolute maximum ratings (Ta=25 ° C)
? 1
? 1
(1) Tr1 (Nch) Gate
(2) Tr2 (Pch) Source
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
Tr1 : Nch Tr2 : Pch
30 ? 20
± 12
± 12
Unit
V
V
(1) (2)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(3)
(3) Tr2 (Pch) Gate
(4) Tr2 (Pch) Drain
(5) Tr1 (Nch) Source
(6) Tr1 (Nch) Drain
Drain current
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
P D
? 1
? 1
? 2
± 1.5
± 6.0
0.8
6.0
1.25
0.9
± 1.5
± 6.0
? 0.75
? 6.0
A
A
A
A
W / TOTAL
W / ELEMENT
Channel temperature
Storage temperature
Tch
Tstg
150
? 55 to + 150
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
Thermal resistance
?
Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
100
139
Unit
° C / W / TOTAL
° C / W / ELEMENT
? Mounted on a ceramic board
Rev.B
1/7
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